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Purity Grade semiconductor grade
The gas decomposes near 600K to germanium and hydrogen. Because of its thermal lability, germane is used in the semiconductor industry for the epitaxial growth of germanium by MOVPE or chemical beam epitaxy. Organogermanium precursors (e.g. isobutylgermane, alkylgermanium trichlorides, and dimethylaminogermanium trichloride) have been examined as less hazardous liquid alternatives to germane for deposition of Ge-containing films by MOVPE.
Molecular Weight 76.62g /mol
Alternative name Germanium tetrahydride, Germanomethane, Monogermane
CAS No. 7782-65-2
Additional Info This item is not permitted to transport by air.
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Mixed Refrigerant R404A
nitric oxide gas